| PART |
Description |
Maker |
| AT28BV64 AT28BV64-30SI AT28BV64-30PC AT28BV64-30PI |
64K 8K x 8 Battery-Voltage CMOS E2PROM
64K (8K x 8) Battery-Voltage CMOS
From old datasheet system
|
ATMEL[ATMEL Corporation]
|
| CAT28C64A CAT28C64AI-20 28C64A-20 CAT28C64A-15 CAT |
64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM
128Kx8 EEPROM
64K - BIT CMOS E2PROM
|
Atmel, Corp.
CATALYST[Catalyst Semiconductor]
|
| AT27BV512 AT27BV512-70TU AT27BV512-70RI AT27BV512- |
512K (64K x 8) Unregulated Battery-Voltage High-Speed OTP EPROM
|
ATMEL Corporation
|
| AT28C16-15 AT28C16-15SI AT28C16E-15SI AT28C16 AT28 |
64K 8K x 8 Battery-Voltage CMOS E2PROM 2K X 8 EEPROM 5V, 150 ns, PDSO24
16K (2K x 8) Parallel EEPROMs
16K 2K x 8 CMOS E2PROM
|
Atmel, Corp.
ATMEL[ATMEL Corporation]
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| WU400 WU100 WU101 WU102 WU103 WU104 WU105 WU106 WU |
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage -12.0 VDC. Output current -400 mA. Input current 10 mA(no load), 2520 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage -15.0 VDC. Output current -333 mA. Input current 10 mA(no load), 2510 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage 15.0 VDC. Output current 667 mA. Input current 10 mA(no load), 2510 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage 3.3 VDC. Output current 3000 mA. Input current 10 mA(no load), 2470 mA(full load).
10/15 Watts WU Series 10/15瓦吴系列
Nickel Cadmium Battery; Voltage Rating:1.2V; Battery Size Code:Sub C; Battery Capacity:2100mAh
Nickel Cadmium Battery; Voltage Rating:1.2V; Battery Size Code:Sub C; Battery Capacity:1900mAh; Battery Terminals:Pressure Contact
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage 5.0 VDC. Output current 2000 mA. Input current 10 mA(no load), 2620 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage 12.0 VDC. Output current 800 mA. Input current 10 mA(no load), 2520 mA(full load).
DC/DC converter, 10/15 watts. 4:1 input range. Input voltage 4.5-6.0 VDC. Output voltage -5.0 VDC. Output current -1000 mA. Input current 10 mA(no load), 2620 mA(full load).
|
XPiQ
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
International Power Sources
|
| 28LV64A-30I_P 28LV64A 28LV64A-20/SO 28LV64A-20/TS |
SENSOR, QUICK DISCONNECT WITH EUROFAST 64K的（8K的8）低电压的CMOS EEPROM
64K (8K x 8) Low Voltage CMOS EEPROM 64K的（8K的8）低电压的CMOS EEPROM
64K (8K x 8) Low Voltage CMOS EEPROM(低压,64K CMOS 并行EEPROM) 64K的（8K的8）低电压的CMOS EEPROM的（低压4K的位，并行的CMOS EEPROM的）
Circular Connector; Body Material:Aluminum Alloy; Series:MS3110; No. of Contacts:32; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
|
Microchip Technology, Inc.
Microchip Technology Inc.
|
| IDT71V016 IDT71V016SA IDT71V016SA10BF8 IDT71V016SA |
3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 12 ns, PBGA48
High-Performance Current-Mode PWM Controller 14-SOIC -40 to 85 64K X 16 STANDARD SRAM, 10 ns, PDSO44
64K X 16 STANDARD SRAM, 12 ns, PDSO44 0.400 INCH, PLASTIC, SOJ-44
TOOLS,SCREWDRIVERS,TORX,BALLDRIVER T-HANDLE SET,10-PC.INCH SIZES 3/32-3/8" AND STAND,HAND TOOLS,BALLDRIVER® T-HANDLE SETS ,BONDHUS
3.3V 64K x 16 Static RAM
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Techn...
|
| AS7C3364FT36B-80TQIN AS7C3364FT32B AS7C3364FT32B-1 |
From old datasheet system
Shielding Gasket; Gasket Style:D-Shaped; Body Material:Beryllium Copper alloy #C17200; Height:.11"; Length:16"; Mounting Type:Adhesive; Thickness:.0027"; Width:.28" 64K X 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 36 STANDARD SRAM, 7.5 ns, PQFP100
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| PB137 6278 PB137ACV |
From old datasheet system
POSITIVE VOLTAGE REGUALTOR FOR BATTERY CHARGER
POSITIVE VOLTAGE REGULATOR FOR BATTERY CHARGER
|
意法半导
STMicroelectronics
SGS Thomson Microelectronics
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
